BCP56-16 Power Mosfet Transistor NPN medium power transistors
multi emitter transistor
,silicon power transistors
BCP54; BCP55; BCP56
NPN medium power transistors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Switching.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic package.
PNP complements: BCP51, BCP52 and BCP53.
PINNING
PIN | DESCRIPTION |
1 | base |
2,4 | collector |
3 | emitter |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO |
collector-base voltage BCP54 BCP55 BCP56 |
open emitter |
− − − |
45 60 100 |
V |
VCEO |
collector-emitter voltage BCP54 BCP55 BCP56 |
open base |
− − − |
45 60 80 |
V |
VEBO | emitter-base voltage | open collector | - | 5 | V |
IC | collector current (DC) | - | 1 | A | |
ICM | peak collector current | - | 1.5 | A | |
IBM | peak base current | - | 0.2 | A | |
Ptot | total power dissipation | Tamb ≤ 25 °C; note 1 | - | 1.33 | W |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | operating ambient temperature | -65 | +150 | °C |
Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
Stock Offer (Hot Sell)
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